Comparison between Hf-silicate films deposited by ALD with BDMAS [SiH 2(N(CH3)2)2] and TDMAS [SiH(N(CH3)2)3] precursors

Electrochemical and Solid-State Letters

Volumn 8, Issue 10, 2005, Pages

  Kamiyama, Satoshi ^a   Miura, Takayoshi ^a   Nara, Yasuo ^a  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FILM GROWTH; HAFNIUM COMPOUNDS; IMPURITIES; SILICA;

ATOMIC LAYER DEPOSITION (ALD); FILM DEPOSITION; GROWTH CYCLES; HF-SILICATE FILMS;

THIN FILMS;

EID: 25644454483     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2012273     Document Type: Article

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