Dependence of barrier height and effective mass on nitrogen concentration at SiOxNy/Si interface and gate oxide thickness

Smart Materials and Structures

Volumn 15, Issue 1, 2006, Pages

  Ng, C Y ^a   Chen, T P ^a   Ang, C H ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TUNNELING; ELECTRONIC STRUCTURE; INTERFACES (COMPUTER); NITROGEN;

BARRIER HEIGHT; TUNNELING CURRENTS;

SILICA;

EID: 31144447681     PISSN: 09641726     EISSN: 1361665X     Source Type: Journal    
DOI: 10.1088/0964-1726/15/1/007     Document Type: Conference Paper

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