Gate oxide thickness dependence of edge charge trapping in NMOS transistors caused by charge injection under constant-current stress

IEEE Transactions on Electron Devices

Volumn 50, Issue 6, 2003, Pages 1548-1550

  Chen, T P ^a   Huang, Jiayi ^a   Tse, M S ^a   Tan, S S ^a   Ang, C H ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

Band to band tunneling; Charge trapping; Device characterization; MOS device; Thin oxide

Indexed keywords

ELECTRIC CHARGE; LEAKAGE CURRENTS; OXIDES; SEMICONDUCTOR DIODES;

CHARGE TRAPPING;

MOSFET DEVICES;

EID: 0041663629     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.813339     Document Type: Article

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