A simple technique to determine barrier height change in gate oxide caused by electrical stress

IEEE Transactions on Electron Devices

Volumn 49, Issue 8, 2002, Pages 1493-1496

  Chen, T P ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Device characterization; MOS devices; Thin oxide

Indexed keywords

CAPACITANCE MEASUREMENT; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELD EFFECTS; ELECTRON TRAPS; ELECTRON TUNNELING; INTERFACES (MATERIALS); MOS DEVICES;

CHARGE TAPPING; ELECTRICAL STRESS; FOWLER NORDHEIM TUNNELING CURRENT; GATE OXIDE; POWER LAW;

GATES (TRANSISTOR);

EID: 0036684683     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.801244     Document Type: Article

References (11)

1. New insights in the relation between electron trap generation and the statistical properties of oxide breakdown
2. Soft breakdown in ultrathin gate oxides: Correlation with the percolation theory of nonlinear conductors
3. Mechanism of stress-induced leakage current in MOS capacitors
4. Correlation of stress-induced leakage current with generated positive trapped charges for ultrathin gate oxide
5. +)-oxide-silicon (p) structures: Effect of the oxide thickness
6. Charges trapped throughout the oxide and their impact on the Fowler-Nordheim current in MOS devices
7. Analysis of the effects of constant-current Fowler-Nordheim-tunneling injection with charge trapping inside the potential barrier
8. Interface trap generation by FN injection under dynamic oxide field stress
9. Stress voltage polarity dependence of thermally grown thin gate oxide wearout
10. High field related thin oxide wearout and breakdown
11. A comprehensive study of hot carrier stress-induced drain leakage current degradation in thin-oxide n-MOSFETs