Influence of interfacial nitrogen on edge charge trapping at the interface of gate oxide/drain extension in metal-oxide-semiconductor transistors

Applied Physics Letters

Volumn 82, Issue 18, 2003, Pages 3113-3115

  Chen, T P ^a   Huang, J Y ^a   Tse, M S ^a   Tan, S S ^a   Ang, C H ^b   Fung, S ^c  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

^c UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CHARGE; ELECTROCHEMISTRY; INTERFACES (MATERIALS); NITROGEN;

CHARGE TRAPPING;

MOSFET DEVICES;

EID: 0037514198     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1572471     Document Type: Article

References (13)

1. M. L. Green, E. P. Gusev, R. Degraeve, and E. L. Garfunkel, J. Appl. Phys. 90, 2057 (2001).
2. Z. H. Liu, P. T. Lai, and Y. C. Cheng, IEEE Trans. Electron Devices 38, 344 (1991).
3. M. K. Mazumder, A. Teramoto, J. Koraori, M. Sekine, S. Kawazu, and Y. Mashiko, IEEE Trans. Electron Devices 46, 1121 (1999).
4. M. Seven, L. Dori, M. Impronta, and S. Guerri, IEEE Trans. Electron Devices 36, 2447 (1989).
5. H.-J. Wann, P. K. Ko, and C. Hu, Tech. Dig. - Int. Electron Devices Meet. 1992, 147 (1992).
6. S. A. Parke, J. E. Moon, H.-J. Wann, P. K. Ko, and C. Hu, IEEE Trans. Electron Devices 39, 1694 (1992).
7. J. Chen, T. Y. Chan, I. C. Chen, P. K. Ko, and C. Hu, IEEE Electron Device Lett. 8, 515 (1987).
8. J. H. Chen, S. C. Wong, and Y. H. Wang, IEEE Trans. Electron Devices 48, 1400 (2001).
9. T. P. Chen, D. S. H. Chan, and W. K. Chim, Semicond. Sci. Technol. 11, 672 (1996).
10. T. Wang, L. P. Chiang, N. K. Zous, C. F. Hsu, L. Y. Huang, and T. S. Chao, IEEE Trans. Electron Devices 46, 1877 (1999).
11. T. P. Chen, J. Huang, M. S. Tse, and X. Zeng, Solid-State Electron. 46, 2013 (2002).
12. S. Ogawa, M. Shimaya, and N. Shiono, J. Appl. Phys. 77, 1137 (1995).
13. C.-H. Aang, C.-M. Lek, S. S. Tan, B. J. Cho, T. P. Chen, W. H. Lin, and J. Z. Zhen, Jpn. J. Appl. Phys., Part 2 41, L314 (2002).