Direct tunneling current model for MOS devices with ultra-thin gate oxide including quantization effect and polysilicon depletion effect

Solid State Communications

Volumn 125, Issue 3-4, 2003, Pages 219-223

  Liu, Xiaoyan ^a   Kang, Jinfeng ^a   Han, Ruqi ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

A. Metal insulator semiconductor; D. Tunneling

Indexed keywords

BOUNDARY CONDITIONS; DIELECTRIC MATERIALS; ELECTRON TUNNELING; GATES (TRANSISTOR); METAL INSULATOR BOUNDARIES; POLYSILICON; QUANTUM THEORY;

TUNNELING CURRENT;

MOS DEVICES;

EID: 0037221191     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(02)00719-6     Document Type: Article

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