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Volumn 47, Issue 1, 2003, Pages 161-163

Analysis of direct tunneling for thin SiO2 film by Wentzel, Kramers, Brillouin method - Considering tail of distribution function

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL METHODS; ELECTRIC POTENTIAL; ELECTRON EMISSION; ELECTRON TUNNELING; FERMI LEVEL; FUNCTIONS; SILICA; SUBSTRATES;

EID: 0037210895     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00274-5     Document Type: Article
Times cited : (3)

References (10)
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    • 0033579745 scopus 로고    scopus 로고
    • Analytic model for direct tunneling current in polycrystalline silicon-gate metal-oxide-semiconductor devices
    • Register L.F., Rosenbaum E., Yang K. Analytic model for direct tunneling current in polycrystalline silicon-gate metal-oxide-semiconductor devices. Appl. Phys. Lett. 74:1999;457-459.
    • (1999) Appl. Phys. Lett. , vol.74 , pp. 457-459
    • Register, L.F.1    Rosenbaum, E.2    Yang, K.3
  • 4
    • 0033318851 scopus 로고    scopus 로고
    • Practical model for low electric field direct-tunneling current characteristics in nanometer-thick oxide films
    • Nakatsuji H., Omura Y. Practical model for low electric field direct-tunneling current characteristics in nanometer-thick oxide films. Electron. Lett. 35:1999;2016-2017.
    • (1999) Electron. Lett. , vol.35 , pp. 2016-2017
    • Nakatsuji, H.1    Omura, Y.2
  • 5
    • 0001929570 scopus 로고
    • Tunneling from an independent-particle point of view
    • Harrison W.A. Tunneling from an independent-particle point of view. Phys. Rev. 123:1961;85-89.
    • (1961) Phys. Rev. , vol.123 , pp. 85-89
    • Harrison, W.A.1
  • 9
    • 0036533241 scopus 로고    scopus 로고
    • 2 film on n-type Si(1 0 0) by WKB method considering the quantum effect in the accumulation layer
    • 2 film on n-type Si(1. 0 0) by WKB method considering the quantum effect in the accumulation layer Solid-State Electron. 46:2002;577-579.
    • (2002) Solid-State Electron. , vol.46 , pp. 577-579
    • Matsuo, N.1    Takami, Y.2    Kitagawa, Y.3
  • 10
    • 34547827353 scopus 로고
    • Properties of semiconductor surface inversion layers in the electric quantum limit
    • Stern F., Howard W.E. Properties of semiconductor surface inversion layers in the electric quantum limit. Phys. Rev. 163:1967;816-835.
    • (1967) Phys. Rev. , vol.163 , pp. 816-835
    • Stern, F.1    Howard, W.E.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.