Growth modes of InN (000-1) on GaN buffer layers on sapphire

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 23, Issue 2, 2005, Pages 304-309

  Liu, Bing ^a   Kitajima, Takeshi ^a,b   Chen, Dongxue ^a   Leone, Stephen R ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b NATIONAL DEFENSE ACADEMY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER LAYERS; SAPPHIRE SUBSTRATES;

ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; MORPHOLOGY; NUCLEATION; SAPPHIRE; SCANNING TUNNELING MICROSCOPY; SURFACE ACTIVE AGENTS; THIN FILMS;

INDIUM COMPOUNDS;

EID: 31144438332     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1864056     Document Type: Article

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