InN Island shape and its dependence on growth condition of molecular-beam epitaxy

Applied Physics Letters

Volumn 83, Issue 25, 2003, Pages 5157-5159

  Cao, Y G ^a,c   Xie, M H ^a   Liu, Y ^a   Ng, Y F ^a   Wu, H S ^a   Tong, S Y ^b  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^c INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; CHEMICAL REACTORS; CHEMICAL RELAXATION; CRYSTAL LATTICES; DISLOCATIONS (CRYSTALS); FILM GROWTH; MOLECULAR BEAM EPITAXY; QUENCHING; REACTION KINETICS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SELF ASSEMBLY; SEMICONDUCTING FILMS; STRAIN; ULTRAHIGH VACUUM; VECTORS;

LATTICE DISTORTION; RESIDUAL STRAIN;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0942299454     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1635077     Document Type: Article

References (21)

1. S. Nakamura, IEEE Circuits Devices Mag. 11, 19 (1995).
2. S. Strite and H. Morkoç, J. Vac. Sci. Technol. B 10, 1237 (1992).
3. D. Bimberg, M. Grundmann, and N. N. Ledentsov, Quantum Dot Hetero-structures (Wiley, London, 1999).
4. Y. F. Ng, Y. G. Cao, M. H. Xie, X. L. Wang, and S. Y. Tong, Appl. Phys. Lett. 81, 3960 (2002).
5. E. Bauer and J. H. van der Merwe, Phys. Rev. B 33, 3657 (1986).
6. C. Ratsch and A. Zangwill, Surf. Sci. 293, 123 (1993).
7. J. Tersoff and F. K. LeGoues, Phys. Rev. Lett. 72, 3570. (1994).
8. L. G. Wang, P. Kratzer, M. Scheffler, and N. Moll, Phys. Rev. Lett. 82, 4042 (1999); L. G. Wang, P. Kratzer, N. Moll, and M. Scheffler, Phys. Rev. B 62, 1897 (2000).
9. L. G. Wang, P. Kratzer, M. Scheffler, and N. Moll, Phys. Rev. Lett. 82, 4042 (1999); L. G. Wang, P. Kratzer, N. Moll, and M. Scheffler, Phys. Rev. B 62, 1897 (2000).
10. N. Moll, M. Scheffler, and E. Pehlke, Phys. Rev. B 58. 4566 (1998).
11. I. Daruka, J. Tersoff, and A.-L. Barabási, Phys. Rev. Lett. 82, 2753 (1999).
12. J. Tersoff and R. M. Tromp, Phys. Rev. Lett. 70, 2782 (1993).
13. S. M. Sean, M. H. Xie, W. K. Zhu, L. X. Zheng, H. S. Wu, and S. Y. Tong, Surf. Sci. 445, L71 (2000).
14. M. H. Xie, S. M. Seutter, W. K. Zhu, L. X. Zheng, H. S. Wu, and S. Y. Tong, Phys. Rev. Lett. 82, 2749 (1999).
15. C. Kruse, S. Einfeldt, T. Böttcher, and D. Hommel, Appl. Phys. Lett. 79, 3425 (2001).
16. M. D. Johnson, C. Orme, A. W. Hunt, D. Graff, J. Sudijono, L. M. Sander, and B. G. Orr, Phys. Rev. Lett. 72, 116 (1994).
17. M. F. Gyure, J. J. Zinck, C. Ratsch, and D. D. Vvedensky, Phys. Rev. Lett. 81, 4931 (1998).
18. M. H. Xie, L. X. Zheng, and S. Y. Tong (unpublished).
19. H. Saito, K. Nishi, and S. Sugou, Appl. Phys. Lett. 74, 1224 (1999).
20. G. Medeiros-Ribeiro, A. M. Bratkovski, T. I. Kamins, D. A. A. Ohlberg, and R. S. Williams, Science 279, 353 (1998).
21. J. Y. Tsao, Materials Fundamentals of Molecular Beam Epitaxy (Academic, San Diego, 1993).