Imaging of defect-mediated surface morphology of GaN (000 1̄) grown on sapphire by molecular beam epitaxy

Journal of Applied Physics

Volumn 97, Issue 2, 2005, Pages

  Liu, B ^a   Leone, Stephen R ^a   Kitajima, T ^b   Zhang, T H ^c,d   Borca, C ^c,d  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b NATIONAL DEFENSE ACADEMY   (Japan)

^c NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^d UNIVERSITY OF COLORADO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH TEMPERATURE TRANSISTORS; PLASMA ASSISTED MOLECULAR BEAM EPITAXY (MBE); SAPPHIRE DEFECTS; SAPPHIRE NITRIDATION;

ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; LOW ENERGY ELECTRON DIFFRACTION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; MORPHOLOGY; SAPPHIRE; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR QUANTUM DOTS; SURFACES; THERMAL EFFECTS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 19944432150     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1839636     Document Type: Article

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