Structural, vibrational and electronic properties of faceted GaN(0001̄) surfaces

Surface Science

Volumn 427-428, Issue , 1999, Pages 250-256

  Sloboshanin, S ^a   Tautz, F S ^a   Polyakov, V M ^a   Starke, U ^a,b   Usikov, A S ^c   Ber, B Ja ^c   Schaefer, J A ^a  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^c IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; HYDROGENATION; IONS; LOW ENERGY ELECTRON DIFFRACTION; MOLECULAR VIBRATIONS; SAPPHIRE; SURFACES; WATER; X RAY PHOTOELECTRON SPECTROSCOPY;

ANGULAR RESOLVED X RAY PHOTOELECTRON; CONDUCTION BAND SURFACE PLASMON; DISSOCIATIVE ADSORPTION; ELECTRON SOLID INTERACTIONS; FACETS; GALLIUM NITRIDE; HIGH RESOLUTION ELECTRON ENERGY LOSS SPECTROSCOPY; VIBRATIONS OF ADSORBED MOLECULES;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033148586     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(99)00274-5     Document Type: Article

References (37)

1. Nakamura S., Senoh M., Iwasa N., Nagahama S. Jpn J. Appl. Phys. Part 2. 34:1995;L797.
2. Nakamura S., Senoh M., Iwasa N., Nagahama S., Yamada T., Mukai T. Jpn J. Appl. Phys. Part 2. 34:1995;L1332.
3. Nakamura S., Senoh M., Nagahama S., Iwasa N., Yamada T., Matsushida T., Kiyuki H., Sugimoto Y. Jpn J. Appl. Phys. Part 2. 35:1996;L74S.
4. Nakamura S., Senoh M., Nagahama S., Iwasa N., Yamada T., Matsushida T., Kiyuki H., Sugimoto Y. Appl. Phys. Lett. 68:1996;2105.
5. Ponce F.A. Gil B. Group III Nitride Semiconductor Compounds. 1998;Oxford University Press, Oxford.
6. Yoshida S., Misawa S., Gonda S. Appl. Phys. Lett. 42:1983;427.
7. Amano H., Sawaki N., Akasaki I., Toyoda Y. Appl. Phys. Lett. 48:1986;353.
8. Nakamura S. Jpn J. Appl. Phys. 30:1991;L1705.
9. Wu C.I., Kahn A., Taskar N., Dorman D., Gallagher D. J. Appl. Phys. 83:1998;4249.
10. Bermudez V.M. J. Appl. Phys. 80:1996;1190.
11. Bermudez V.M., Jung T.M., Doverspike K., Wickenden A.E. J. Appl. Phys. 79:1996;110.
12. Dhesi S.S., Stagarescu C.B., Smith K.E., Doppalapudi D., Singh R., Moustakas T.D. Phys. Rev. B. 56:1997;10271.
13. Rapcewicz K., Nardelli M.B., Bernholc J. Phys. Rev. B. 56:1997;R12725.
14. Sung M.M., Ahn J., Bykov V., Rabalais J.W., Koleske D.D., Wickenden A.E. Phys. Rev. B. 54:1996;14652.
15. Ahn J., Sung M.M., Rabalais J.W., Koleske D.D., Wickenden A.E. J. Chem. Phys. 107:1997;9577.
16. Ponce F.A., Bour D.P., Young W.T., Saunders M., Steeds J.W. Appl. Phys. Lett. 69:1996;337.
17. Daudin B., Rouviere J.L., Arlery M. Appl. Phys. Lett. 69:1996;2480.
18. Rouviere J.L., Arlery M., Niebuhr R., Bachem K.H., Briot O. MRS Int. J. Nitride Semicond. Res. 1:1996;33.
19. Smith A.R., Feenstra R.M., Greve D.W., Shin M.S., Skowronski M., Neugebauer J., Northrup J.E. Appl. Phys. Lett. 72:1998;2114.
20. Smith A.R., Feenstra R.M., Greve D.W., Neugebauer J., Northrup J.E. Phys. Rev. Lett. 79:1997;3934.
21. Grabowski S.P., Kampen T.U., Nienhaus H., Mönch W. Appl. Surf. Sci. 123/124:1998;33.
22. Kampen T.U., Eyckeler M., Mönch W. Appl. Surf. Sci. 123/124:1998;28.
23. Kampen T.U., Mönch W. Appl. Surf. Sci. 117/118:1997;388.
24. Polyakov V.M., Tautz F.S., Sloboshanin S., Usikov A.S., Ber B.Ja., Schaefer J.A. Semicond. Sci. Technol. 13:1998;1396.
25. He Z.Q., Ding X.M., Hou X.Y., Wang X. Appl. Phys. Lett. 64:1994;315.
26. Akasaki I., Amano H. Edgar J.H. Properties of Group-III Nitrides, EMIS Data Review Series 11. 1994;Institute of Electrical Engineers, London.
27. Cumpson P.J. J. Electr. Spectrosc. Relat. Phenom. 73:1995;25.
28. Seah M.P., Dench W.A. Surf. Interface Anal. 1:1979;2.
29. Denecke R., Morais J., Wetzel C., Liesegang J., Haller E.E., Fadley C.S. Mater. Res. Soc. Symp. Proc. 468:1997;263.
30. Allinger Th., Schaefer J.A., Stuhlmann C., Beckers U., Ibach H. Physica B. 170:1991;481.
31. Schaefer J.A., Allinger Th., Stuhlmann Ch., Beckers U., Ibach H. Surf. Sci. 251/252:1991;1000.
32. Frankel D.J., Anderson J., Lapeyre G.J., Farrell H.H. J. Vac. Sci. Technol. B. 3:1985;1093.
33. Filippetti A., Mench M., Bosin A. Mater. Res. Soc. Symp. Proc. 449:1997;953.
34. Watson P.R., Van Hove M.A., Hermann K. Atlas of Surface Structures (J. Phys. Chem. Ref. Data, Monograph No. 5). 1A:1994;299.
35. Polyakov V., Elbe A., Schaefer J.A. Appl. Phys. A. 60:1995;567.
36. Polyakov V., Elbe A., Wu J., Lapeyre G.J., Schaefer J.A. Phys. Rev. B. 54:1996;2010.
37. Götz W., Johnson N.M., Chen C., Kuo C., Imler W. Appl. Phys. Lett. 68:1996;3144.