Al contamination in InGaAsN quantum wells grown by metalorganic chemical vapor deposition and 1.3 μm InGaAsN vertical cavity surface emitting lasers

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 4 A, 2004, Pages 1260-1263

  Takeuchi, Tetsuya ^a   Chang, Ying Lan ^a   Leary, Michael ^a   Mars, Dan ^a   Song, Yoon Kyu ^a   Roh, S David ^a   Luan, Hsin Chiao ^a   Mantese, Lucy Marie ^a   Tandon, Ashish ^a   Twist, Rosemary ^a   Belov, Svetlana ^a   Bour, David ^a   Tan, Michael ^a  

^a AGILENT TECHNOLOGIES   (United States)

Author keywords

Al contamination; AlGaAs; InGaAsN; Long wavelength; MOCVD; VCSEL

Indexed keywords

CONTAMINATION; CURRENT DENSITY; DIFFUSION; LIGHT EMISSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS; SPECTROSCOPIC ANALYSIS; SUBSTRATES; SURFACE ROUGHNESS;

ALGAAS; ALUMINIUM CONTAMINATION; LONG WAVELENGTH; VCSEL;

SEMICONDUCTOR QUANTUM WELLS;

EID: 3042792349     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.1260     Document Type: Article

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