Preferential formation of AlN bonds in low N-content AlGaAsN

Applied Physics Letters

Volumn 80, Issue 12, 2002, Pages 2081-2083

  Geppert, T ^a   Wagner, J ^a   Kohler K ^a   Ganser, P ^a   Maier, M ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITION OF AL; AL-CONCENTRATION; AL-CONTENT; ALN; LONGITUDINAL OPTICAL PHONONS; N CONTENT; PHONON MODE; RAMAN SPECTRUM; THERMAL-ANNEALING; VIBRATIONAL MODES;

GALLIUM NITRIDE; PHONONS; RAMAN SCATTERING; RAMAN SPECTROSCOPY;

ALUMINUM;

EID: 79956037275     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1464660     Document Type: Article

References (20)

1. M. Kondow, K. Uomi, A. Niwa, T. Kitatani, S. Watahiki, and Y. Yazawa, Jpn. J. Appl. Phys., Part 1 35, 1273 (1996). jjb JAPNDE 0021-4922
2. S. R. Kurtz, A. A. Allermann, D. E. Jones, J. M. Gee, J. J. Banas, and B. E. Hammons, Appl. Phys. Lett. 74, 729 (1999). apl APPLAB 0003-6951
3. J. B. Héroux, X. Wang, and W. I. Wang, Appl. Phys. Lett. 75, 2716 (1999). apl APPLAB 0003-6951
4. W. G. Bi and C. W. Tu, Appl. Phys. Lett. 70, 1608 (1997). apl APPLAB 0003-6951
5. L. Bellaiche, S. H. Wei, and A. Zunger, Appl. Phys. Lett. 70, 3558 (1997). apl APPLAB 0003-6951
6. See, e.g., I. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan, J. Appl. Phys. 89, 5815 (2001). jap JAPIAU 0021-8979
7. W. Shan, W. Walukiewicz, K. M. Yu, J. W. Ager, III, E. E. Haller, J. F. Geisz, D. J. Friedman, J. M. Olson, S. R. Kurtz, and C. Nauka, Phys. Rev. B 62, 4211 (2000); prb PRBMDO 0163-1829
8. K. M. Yu, W. Walukiewicz, J. Wu, J. W. Beeman, J. W. Ager, E. E. Haller, W. Shan, H. P. Xin, C. W. Tu, and M. C. Ridgway, J. Appl. Phys. 90, 2227 (2001). jap JAPIAU 0021-8979
9. J. O. Maclean, D. J. Wallis, T. Martin, M. R. Houlton, and A. J. Simons, J. Cryst. Growth 231, 31 (2001). jcr JCRGAE 0022-0248
10. H. C. Alt, A. Y. Egorov, H. Riechert, B. Wiedemann, J. D. Meyer, R. W. Michelmann, and K. Bethge, Appl. Phys. Lett. 77, 3331 (2000). apl APPLAB 0003-6951
11. T. Prokofyeva, T. Sauncy, M. Seon, M. Holtz, Y. Qiu, S. Nikishin, and H. Temkin, Appl. Phys. Lett. 73, 1409 (1999). apl APPLAB 0003-6951
12. J. Wagner, K. Köhler, P. Ganser, and N. Herres, Appl. Phys. Lett. 77, 3592 (2000). apl APPLAB 0003-6951
13. J. Wagner, T. Geppert, K. Köhler, P. Ganser, and N. Herres, J. Appl. Phys. 90, 5027 (2001). jap JAPIAU 0021-8979
14. S. Kurtz, J. Webb, L. Gedvilas, D. Friedman, J. Geisz, J. Olson, R. King, D. Joslin, and N. Karam, Appl. Phys. Lett. 78, 748 (2001). apl APPLAB 0003-6951
15. T. Kitatani, M. Kondow, and M. Kudo, Jpn. J. Appl. Phys., Part 2 7, L750 (2001). jjc JAPLD8 0021-4922
16. W. A. Harrison, Electronic Structure and Properties of Solids (Dover, New York, 1989), p. 176.
17. K. Kim and A. Zunger, Phys. Rev. Lett. 86, 2609 (2001). prl PRLTAO 0031-9007
18. P. J. Klar, H. Grüning, J. Koch, S. Schäfer, K. Volz, W. Stolz, W. Heimbrodt, A. M. Kamal Saadi, A. Lindsay, and E. P. O'Reilly, Phys. Rev. B 64, 121203 (2001). prb PRBMDO 0163-1829
19. See, e.g., R. E. Pritchard, R. C. Newman, J. Wagner, F. Fuchs, R. Jones, and S. Öberg, Phys. Rev. B 50, 10628 (1994). prb PRBMDO 0163-1829
20. See, e.g., H. Grille, C. Schnittler, and F. Bechstedt, Phys. Rev. B 61, 6091 (2000). prb PRBMDO 0163-1829