Morphological instability of GaInNAs quantum wells on Al-containing layers grown by metalorganic vapor-phase epitaxy

Applied Physics Letters

Volumn 82, Issue 15, 2003, Pages 2431-2433

  Sundgren, P ^a   Asplund, C ^a   Baskar, K ^a   Hammar, M ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; VAPOR PHASE EPITAXY;

DISTRIBUTED BRAGG REFLECTORS (DBR);

ORGANOMETALLICS;

EID: 0037988842     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1567810     Document Type: Article

References (12)

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