Silicon carbide TUNNETT diodes

Solid-State Electronics

Volumn 48, Issue 9, 2004, Pages 1569-1577

  Buniatyan, V V ^a   Aroutiounian, V M ^b   Zekentes, K ^c   Camara, N ^c   Soukiassian, P ^d  

^a STATE ENGINEERING UNIVERSITY OF ARMENIA   (Armenia)

^b YEREVAN STATE UNIVERSITY   (Armenia)

^c INSTITUTE OF COMPUTER SCIENCE   (Greece)

^d DIF   (France)

Author keywords

Microwave diode; Silicon carbide; Transit time; TUNNET

Indexed keywords

CHARGE CARRIERS; ELECTRIC BREAKDOWN; IMPATT DIODES; IONIZATION; MICROWAVES; POWER AMPLIFIERS; SILICON CARBIDE;

MICROWAVE DIODES; TRANSIT-TIME; TUNNEL INJECTION; TUNNET DIODES;

SEMICONDUCTOR DIODES;

EID: 2942702384     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.03.004     Document Type: Conference Paper

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