High-frequency operation potential of the tunnel emitter transistor

Solid-State Electronics

Volumn 46, Issue 7, 2002, Pages 1033-1037

  Aderstedt, Erik ^a   Lundgren, Per ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

MOS devices; Tunnel emitter transistors; Tunneling

Indexed keywords

COMPUTER SIMULATION; CURRENT DENSITY; ELECTRIC POTENTIAL; ELECTRON TUNNELING; NATURAL FREQUENCIES; TRANSCONDUCTANCE;

TUNNEL EMITTER TRANSISTORS;

MOSFET DEVICES;

EID: 0036642954     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00038-2     Document Type: Conference Paper

References (8)

1. Calculation of transmission tunneling current across arbitrary potential barriers
2. An analysis of the DC and small-signal AC performance of the tunnel emitter transistor
3. 5 gate dielectric stacks
4. Simplified method to calculate the band bending and the subband energies in MOS capacitors
5. Band offsets of wide-band-gap oxides and implications for future electronic devices
6. Concepts of gain at an oxide-semiconductor interface and their application to the TETRAN - A tunnel emitter transistor - And to the MIS switching device
7. Tunneling in a finite superlattice
8. A simple analytical model of the tunnel MIS emitter Auger transistor