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Materials Science Forum

Volumn 389-393, Issue 1, 2002, Pages 751-754

Hole resonant tunneling through SiC/Si-dot/SiC heterostructures

(4) Ikoma, Y a Uchiyama, K a Watanabe, F a Motooka, T a

a KYUSHU UNIVERSITY (Japan)

Author keywords

AFM; Resonant tunneling diodes; Supersonic free jet CVD

Indexed keywords

ATOMIC FORCE MICROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; NUMERICAL METHODS; RESONANT TUNNELING; SILICON CARBIDE; SUBSTRATES; SURFACE MORPHOLOGY; MORPHOLOGY; SUPERSONIC AERODYNAMICS;

CURRENT PEAKS; NEGATIVE DIFFERENTIAL RESISTANCE; RESONANT TUNNELING DIODES; SUPERSONIC FREE JET CVD; CURRENT PEAK; CURRENT VOLTAGE CURVE; DOUBLE-BARRIER STRUCTURES; NEGATIVE DIFFERENTIAL RESISTANCES; NUMERICAL CALCULATION; SI (100) SUBSTRATE; SUPERSONIC FREE JETS;

HETEROJUNCTIONS; RESONANT TUNNELING DIODES;

EID: 0942272813 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/msf.389-393.751 Document Type: Article

Times cited : (8)

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