Demonstration of IMPATT diode oscillators in 4H-SiC

Materials Science Forum

Volumn 389-393, Issue , 2002, Pages 1359-1362

  Yuan, L ^a,b   Cooper, J A ^a   Webb, K J ^a   Melloch, M R ^a  

^a PURDUE UNIVERSITY   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

IMPATT diodes; Microwave; Millimeter wave; Oscillator; SiC

Indexed keywords

DIODES; MICROWAVE OSCILLATORS; MICROWAVES; MILLIMETER WAVES; OSCILLATORS (ELECTRONIC); SILICON CARBIDE; ELECTRIC BREAKDOWN; SEMICONDUCTOR DOPING;

AVALANCHE BREAKDOWN; DOPING PROFILES; HIGH-LOW; KA BAND; MICROWAVE OPERATIONS; X BANDS; DIODE OSCILLATORS;

IMPATT DIODES;

EID: 18144446462     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.389-393.1359     Document Type: Conference Paper

References (2)

1. L. Yuan, M. R. Melloch, J. A. Cooper Jr., and K. J. Webb, “Silicon Carbide IMPATT Oscillators for High-Power Microwave and Millimeter-Wave Generation”, IEEE/Cornell Conf. on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Ithaca, NY, August 7-9, 2000.
2. L. Yuan, J. A. Cooper Jr., M. R. Melloch, and K. J. Webb, “Experimental Demonstration of a Silicon Carbide IMPATT Oscillator,” IEEE Electron Device Lett., 22,266-268 (2001).