Microwave characteristics of BARITT diodes based on silicon carbide vladimir m. aroutiounian, vahe v. buniatyan, and patrick soukiassian

IEEE Transactions on Electron Devices

Volumn 46, Issue 3, 1999, Pages 585-588

  Aroutiounian, V M ^a,c   Buniatyan, V V ^b  

^a YEREVAN STATE UNIVERSITY   (Armenia)

^b CEA SACLAY   (France)

^c UNIVERSITÉ PARIS SACLAY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC IMPEDANCE; ENERGY GAP; MICROWAVES; NEGATIVE RESISTANCE; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SILICON CARBIDE;

BARRIER-INJECTED TRANSIT-TIME (BARITT) DIODES;

SEMICONDUCTOR DIODES;

EID: 0033098669     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.748882     Document Type: Article

References (24)

1. G.L. Harris, Ed., Properties of Silicon Carbide. London, U.K.: INSPEC, 1995.
2. Silicon Carbide Electronic Materials and Devices (Special Issue), MRS Bull., vol. 22, Mar. 1997.
3. J.B. Casady and R. W. Johnson, "Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review, Solid-State Electron., vol. 39, no. 10, p. 1409, 1996.
4. M.N. Yoder, "Wide bandgap semiconductor materials and devices," IEEE Trans. Electron Devices, vol. 43, p. 1633, Oct. 1996.
5. B.J. Baliga, "Trends in power semiconductor devices," IEEE Trans. Electron Devices, vol. 43, p. 1717, Oct. 1996.
6. C.E. Weitzel, J. W. Palmour, C. H. Carter, Jr., K. Moore, K. J. Nordquist, S. T. Alien, C. Tiero, and M. Bhatnager, "Silicon carbide high-power devices," IEEE Trans. Electron Devices, vol. 43, p. 1732, Oct. 1996.
7. V.F. Tsvetkov, S. T. Alien, H. S. Kong, and C. H. Carter Jr., "Recent progress in SiC crystal growth," Inst. Phys. Conf. Ser. London, U.K.: IOP Publishing, 1996, no. 142, p. 17.
8. S.P. Kwok and G. J. Haddad, "Power limitations in BARITT devices," Solid-State Electron., vol. 19, no. 9, p. 795, 1976.
9. G.T. Wright, "A simplified theory of BARITT silicon microwave diodes," Solid-State Electron., vol. 19, no. 7, p. 615, 1976.
10. P.N. Robson, "Low-noise microwave amplification using transferred electron and BARITT diodes," Radio and Electron Eng., vol. 44, no. 10, p. 553, 1974.
11. M. Karasek, "Effect of temperature on BARITT diode large-signal performance," Solid-State Electron., vol. 21, no. 9, p. 1179, 1978.
12. U.B. Sheorey, I. Lundström, and E. A. Ash, "Analysis of punchthrough-injection diode," Int. J. Electron., vol. 30, no. 1, p. 19, 1971.
13. S. Luryi and R. F. Kazarinov, "Optimum BARITT structures," Solid-State Electron., vol. 25, no. 9, p. 943, 1982.
14. S. Esenez and S. H. Lee, "Punchthrough current under diffusion-limited injection: Analysis and applications," J. Appl. Phys., vol. 58, no. 3, p. 1380, 1985.
15. H. Nguyen-ba and G. I. Haddad, "Effects of doping profile on a performance of BARITT devices," IEEE Trans. Electron Devices, vol. ED-24, p. 1154, Sept. 1977.
16. V.M. Aroutiounian and V. V. Buniatian, "Small-signal characteristics of BARITT diodes with traps," Radiotechnika i Electronika, vol. 24, no. 5, p. 1044, 1979.
17. _, "The influence of capture of the injected current carriers on the characteristics of BARITT diodes," Solid-State Electron., vol. 20, no. 6, p. 491, 1977.
18. _, Injection Transit-Time Diodes. Yerevan, Russia: Yerevan State Univ., 1986, (in Russian).
19. _, "BARITT diode based on SiC," Radio Eng. and Electron. Phys., vol. 27, no. 6, p. 1242, 1982.
20. _, "Analysis of the performance of BARITT's with traps under large signal conditions," Electronnaya Technika, séria 2, Semiconductor Devices, vol. 2, p. 44, 1980 (in Russian).
21. O. Eknoyan, S. M. Sze, and E. S. Yang, "Microwave BARITT diode with retarding field," Solid-State Electron., vol. 20, no. 4, p. 285, 1977.
22. R.D. Pollard, M. J. Howes, and D. V. Morgan, "Consideration of accuracy of the determination of C-V low parameters of microwave diodes, in Proc. 8th Europ. Microwave Conf., P. N. Robson, Ed., 1978, p. 192.
23. G.K. Montress and G. M. Upta, "Microwave characterization of silicon BARITT diodes under large-signal conditions," IEEE Trans. Microwave Theory Tech., vol. MTT-27, p. 458, May 1979.
24. D. De Cogan, "The BARITT diodes: A Newcomer to the family," Phys. Technol, vol. 8, no. 1, p. 18, 1977.