Improved measurements of high-field drift velocity in silicon carbide

Materials Science Forum

Volumn 338, Issue , 2000, Pages

  Khan, I A ^a   Cooper Jr , James A ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; ELECTRON TRANSPORT PROPERTIES; THERMOANALYSIS;

ELECTRON SATURATION DRIFT VELOCITY;

SILICON CARBIDE;

EID: 12944251052     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (4)

1. W. v. Müench and E. Pettenpaul, J. Appl. Phys. 48 (1977), p. 4823.
2. I. A. Khan and J. A. Cooper, Jr., Silicon Carbide, III-Nitrides and Related Materials; G. Pensl, H. Morkoc, B. Monemar, and E. Janzen, Eds.; Trans. Tech. Publications (1998), p. 509.
3. I. A. Khan and J. A. Cooper, Jr., to appear in IEEE Trans. Electron Devices, February, 2000.
4. G. Rutsch, R. P. Devaty, D. W. Langer, L. B. Rowland, and W. J. Choyke, Mat'ls. Sci. Forum. 264-268 (1998), p. 517.