BARITT diodes with quantum wells

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3795, Issue , 1999, Pages 551-560

  Aroutiounian, Vladimir M ^a   Buniatyan, Vahe V ^a   Petrosyan, Stepan G ^a  

^a YEREVAN STATE UNIVERSITY   (Armenia)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; DIFFERENTIAL EQUATIONS; ELECTRON EMISSION; FREQUENCIES; NEGATIVE RESISTANCE; SEMICONDUCTOR DEVICE STRUCTURES; SPURIOUS SIGNAL NOISE; TRANSIT TIME DEVICES;

BARRIER INJECTION TRANSIT TIME DIODE; DIFFUSION NOISE; ESCAPE EFFECTS; MICROWAVE CHARACTERISTICS; NEGATIVE DYNAMIC RESISTANCE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0033337684     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.370205     Document Type: Conference Paper

References (28)