Small signal analysis of quantum-well BARITT diodes based on silicon carbide

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4490, Issue , 2001, Pages 160-167

  Aroutiounian, V M ^a   Buniatyan, V V ^b   Soukiassian, P ^c  

^a YEREVAN STATE UNIVERSITY   (Armenia)

^b STATE ENGINEERING UNIVERSITY OF ARMENIA   (Armenia)

^c CEA SACLAY   (France)

Author keywords

Barrier injection; Negative dynamic resistance; Quantum well; Silicon carbide; Transit time diode

Indexed keywords

CARRIER MOBILITY; CHARGE CARRIERS; ELECTRIC IMPEDANCE; ELECTRON TRAPS; FIELD EFFECT TRANSISTORS; HETEROJUNCTION BIPOLAR TRANSISTORS; NEGATIVE RESISTANCE; SEMICONDUCTING SILICON; SILICON CARBIDE;

BANDGAPS; NEGATIVE DYNAMIC RESISTANCE; SEMICONDUCTOR BARRIER INJECTION TRANSIT TIME DIODES STRUCTURES; SMALL SIGNAL ANALYSIS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0035766433     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.455421     Document Type: Article

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