P-3C-SiC/n-6H-SiC heterojunctions: Structural and electrical characterization

Materials Science Forum

Volumn 389-393, Issue 1, 2002, Pages 683-686

  Lebedev, A A ^a   Strel'chuk, A M ^a   Davydov, D V ^a   Savkina, N S ^a   Tregubova, A S ^a   Kuznetsov, A N ^a   Soloviev, V A ^a   Poletaev, N K ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

Band diagram; Exciton, heteropolytype structures; SiC; Sublimation epitaxy

Indexed keywords

BAND STRUCTURE; ELECTRIC PROPERTIES; EPITAXIAL GROWTH; EXCITONS; SEMICONDUCTOR DIODES; SILICON CARBIDE; HETEROJUNCTIONS; SUBLIMATION;

BAND DIAGRAM; HETEROPOLYTYPE STRUCTURES; SUBLIMATION EPITAXY; BAND DIAGRAMS; BAND DISCONTINUITIES; DIODE STRUCTURE; ELECTRICAL CHARACTERIZATION; HETEROEPITAXIAL STRUCTURE;

HETEROJUNCTIONS; SILICON CARBIDE;

EID: 2942699815     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.389-393.683     Document Type: Article

References (8)

1. D.V.Davydov, A.A.Lebedev, A.S.Tregubova, V.V.Kozlovski, A.N.Kuznetsov, E.V.Bogdanova Mat.Sci.Forum 338-342 (2000) 221.
2. A.A.Lebedev, G.N.Mosina, I.P.Nikitina, N.S.Savkina, L.M.Sorokin, A.S.Tregubova Technical Physics Letters, V27, N24 (2001) 57-63.
3. A.A.Lebedev, A.M.Strel'chuk, D.V.Davydov, N.S.Savkina, A.S.Tregubova, A.N.Kuznetsov, V.A.Solov'ev, N.K.Poletaev Applied Surface Science V 183 N 1-4 (2001) 421-426.
4. A.A.Lebedev Semiconductors V33, N2, (1999) 107-130.
5. C.G.B.Garret and W.H.Brattain. Phys.Rev. B., 19(2), (1970) 376
6. B.L.Sharma, R.K.Purohit "Semiconductor heterojunctions", Pergamon Press (1974)
7. M.J.Bozack Phys.stat.sol (b) 202 (1997) 549.
8. F.Bechstedt, P.Kackell, A.Zywietz, K.Karch, B.Adolphet, K. Tenelsen, and J. Furthmuller. Phys.stat.sol.(b) 202 (1997) 35.