4H-SiC IMPATT diode fabrication and testing

Materials Science Forum

Volumn 389-393, Issue , 2002, Pages 1353-1358

  Vassilevski, K V ^a,b   Zorenko, A V ^c   Zekentes, K ^d   Tsagaraki, K ^d   Bano, E ^e   Banc, C ^e   Lebedev, A A ^a  

^a IOFFE INSTITUTE   (Russian Federation)

^b NEWCASTLE UNIVERSITY   (United Kingdom)

^c State Research Inst `Orion'   (Ukraine)

^d INSTITUTE OF COMPUTER SCIENCE   (Greece)

^e CNRS   (France)

Author keywords

Avalanche breakdown; Electron drift velocity; IMPATT diodes; Microwave oscillations

Indexed keywords

AVALANCHE DIODES; DIODES; FABRICATION; MICROWAVE OSCILLATORS; SILICON CARBIDE; FREQUENCIES; MICROWAVES; SEMICONDUCTOR DOPING;

AVALANCHE BREAKDOWN; DOPING PROFILES; ELECTRON DRIFT VELOCITY; FREQUENCY RANGES; HIGH FIELD; MICROWAVE CHARACTERISTICS; MICROWAVE OSCILLATION; PULSED-POWER;

IMPATT DIODES;

EID: 0036433925     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.389-393.1353     Document Type: Conference Paper

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