High-performance RSD poly-Si TFTs with a new ONO gate dielectric

IEEE Transactions on Electron Devices

Volumn 51, Issue 6, 2004, Pages 995-1001

  Chang, Kow Ming ^a   Yang, Wen Chih ^a   Hung, Bing Fang ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Gate dielectric; N2O plasma oxynitride; Oxide nitride oxide (ONO); Raised source drain (RSD); Thin film transistors (TFTs)

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC RESISTANCE; LEAKAGE CURRENTS; POLYSILICON; SEMICONDUCTOR DEVICE STRUCTURES;

GATE DIELECTRIC; RAISED SOURCE DRAIN STRUCTURE;

THIN FILM TRANSISTORS;

EID: 2942661873     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.827382     Document Type: Article

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