"TOP-PECVD": A new conformal plasma enhanced CVD technology using TEOS, ozone and pulse-modulated RF plasma

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 1992-December, Issue , 1992, Pages 289-292

  Ikeda, Y ^a   Kishimoto, K ^a   Hirose, K ^a   Numasawa, Y ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DEVICES; ETCHING; OZONE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICA;

CARBON CONTENT; ETCHING PATTERN; FILM DEPOSITION; FILM-MODIFICATION; HOMOGENEOUS FILMS; PULSE MODULATED; REACTION CHAMBERS; TETRAETHYL ORTHOSILICATES;

PLASMA CVD;

EID: 84914025888     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1992.307362     Document Type: Conference Paper

References (3)

1. L. J. Oimer, E. R. Lory, W. W. Oauhs and A. Harrus, Spring Meeting of the Electrochemical Society 1987, Extended Abstract pp. 368-369.
2. G. B. Raupp, T. S. Cale and H. P. W. Hey, J. Vac. Sci. Technol. BIO, 1992, pp. 37-45.
3. C. P. Chang, C. S. Pai andJ. J. Hsieh, J. Appl. Phys. 67, 1990, pp. 2119-2126.