Oxidation of silicon using electron cyclotron resonance nitrous oxide plasma and its application to polycrystalline silicon thin film transistors

Journal of the Electrochemical Society

Volumn 144, Issue 9, 1997, Pages 3283-3287

  Lee, Jin Woo ^a   Lee, Nae In ^a,b   Hur, Sung Hoi ^a,b   Han, Chul Hi ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; CRYSTAL ORIENTATION; ELECTRIC PROPERTIES; ELECTRON CYCLOTRON RESONANCE; ELECTRON ENERGY LEVELS; GROWTH (MATERIALS); INTERFACES (MATERIALS); NITROGEN; PERFORMANCE; PLASMAS; SEMICONDUCTING SILICON; THIN FILM TRANSISTORS;

ELECTRON CYCLOTRON RESONANCE NITROUS OXIDE PLASMA OXIDATION; PHYSICOCHEMICAL CHARACTERISTIC; THERMAL BUDGET;

OXIDATION;

EID: 0031233513     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837998     Document Type: Article

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