Low S/D resistance FDSOI MOSFETs using polysilicon and CMP

Proceedings of the IEEE Hong Kong Electron Devices Meeting

Volumn , Issue , 2001, Pages 89-92

  Yin, C ^a   Chan, V W C ^a   Chan, P C H ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

CMOS; CMP; Fully depleted SOI; MOSFETs; Poly raised source drain

Indexed keywords

CHEMICAL MECHANICAL POLISHING; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; POLYSILICON; SILICON ON INSULATOR TECHNOLOGY;

FULLY DEPLETED SILICON ON INSULATOR (FDSOI) DEVICES;

MOSFET DEVICES;

EID: 0034828446     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)