Low temperature (≤ 600 °C) unhydrogenated in-situ doped polysilicon thin film transistors: Towards a technology for flat panel displays

Thin Solid Films

Volumn 296, Issue 1-2, 1997, Pages 133-136

  Pichon, L ^a   Raoult, F ^a   Mourgues, K ^a   Kis Sion, K ^a   Mohammed Brahim, T ^a   Bonnaud, O ^a  

^a UNIVERSITÉ DE RENNES 1   (France)

Author keywords

Flat panel displays; Polysilicon thin films; Transistors

Indexed keywords

ANNEALING; DISPLAY DEVICES; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC INSULATORS; LOW TEMPERATURE PROPERTIES; PLASMA ETCHING; SEMICONDUCTING SILICON; SEMICONDUCTOR INSULATOR BOUNDARIES; SILICA; SURFACE CLEANING;

FLAT PANEL DISPLAYS; UNHYDROGENATED POLYSILICON;

THIN FILM TRANSISTORS;

EID: 0031097905     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)09373-X     Document Type: Article

References (14)

1. S.D. Malhi et al., IEEE Trans. Electron Dev., ED-32 (1985) 258.
2. P.H.L. Rasky, D.W. Greve, M.H. Kryder and S. Dutta, J. Appl. Phys., 57 (1985) 4077.
3. N. Duhamel, B. Loisel, in H.P. Strunk, J.H. Werner, B. Fortin and O. Bonnaud (eds.), Polycrystalline Semiconductors III - Physics and Technology, Trans Tech, Zurich, Solid State Phenomena, 37-38 (1994) 535.
4. T. Mohammed-Brahim, M. Sarret, D. Briand, K. Kis-Sion, O. Bonnaud and A. Hadjaj, J. de Phys. IV, colloque C5, suppl. J. Phys. II, 5 (1995) C5 913.
5. D.B. Meakin, P.A. Coxon, P. Migliorato, J. Stoemenos and N.A. Economou, Appl. Phys. Lett., 50 (1987) 1894.
6. C.A. Dimitriadis, P.A. Coxon and N.A. Economou, IEEE Trans. Electron Dev., ED-42 (1995) 950.
7. D. Briand, M. Sarret, F. Le Bihan, O. Bonnaud and L. Pichon, Mater. Sci. Technol., 11 (1995) 1207.
8. K. Nakazawa, K. Tanaka, S. Suyama, K. Kato and S. Khoda, SID 90. Digest (1990) 311.
9. Amir, A. Lakani, Solid-State Electron., 27 (1984) 921.
10. S.K. Ghandhi, VLSI Fabrication Principles, ch. 9, Wiley, New York, 1983.
11. T. Matsuyama, M. Tanaka, S. Tsuda, S. Nakano and Y. Kuwano, Jpn. J. Appl. Phys., 32 (1993) 3720.
12. L. Pichon, F. Raoult, O. Bonnaud, J. Pinel and M. Sarret, IEEE Electron Dev. Lett., EDL-16 (1995) 376.
13. L. Pichon, F. Raoult, O. Bonnaud, H. Sehil and D. Briand, Solid-State Electron., 38 (1995) 1515.
14. N.H. Nickel, P. Mei and J.B. Boyce, IEEE Trans. Electron Dev., ED-42 (1995) 1559.