Ultrathin oxide grown on polysilicon by ECR (Electron Cyclotron Resonance) N2O plasma

International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings

Volumn , Issue , 2000, Pages 133-136

  Han, Sangyeon ^a   Shin, Hyungcheol ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRON CYCLOTRON RESONANCE; ELECTRON TRAPS; FILM GROWTH; NITROGEN OXIDES; OXIDATION; PLASMAS; POLYSILICON; SURFACE ROUGHNESS; ULTRATHIN FILMS;

ELECTRON TRAPPING; POSITIVE CONSTANT CURRENT DENSITY; THERMAL POLYOXIDES; ULTRATHIN OXIDE;

OXIDES;

EID: 0034510714     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (8)