Improvement of polycrystalline silicon thin film transistor using oxygen plasma pretreatment before laser crystallization

IEEE Transactions on Electron Devices

Volumn 49, Issue 7, 2002, Pages 1319-1322

  Moon, Kook Chul ^a   Lee, Jae Hoon ^a   Han, Min Koo ^a  

^a Seoul National University   (South Korea)

Author keywords

Interface; Laser crystallization; Oxygen plasma; Poly Si TFT

Indexed keywords

AMORPHOUS SILICON; ANNEALING; CHEMICAL BONDS; CRYSTALLIZATION; ELECTRON MOBILITY; ELECTRON TRAPS; EXCIMER LASERS; INTERFACES (MATERIALS); LASER APPLICATIONS; LOW TEMPERATURE OPERATIONS; PLASMA APPLICATIONS; THIN FILM TRANSISTORS;

EXCIMER LASER ANNEALING; FIELD EFFECTIVE MOBILITY; INTERFACE TRAPS; LASER CRYSTALLIZATION; OXYGEN PLASMA PRETREATMENT; THERMAL OXIDATION;

POLYSILICON;

EID: 0036638433     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.1013295     Document Type: Article

References (18)

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16. Device degradation of n-channel poly-Si TFTs due to high field, hot carrier and radiation stressing