Quantitative simulation of strained and unstrained InP-based resonant tunneling diodes

Annual Device Research Conference Digest

Volumn , Issue , 1997, Pages 92-93

  Klimeck, Gerhard ^a   Boykin, Timothy B ^a   Bowen, R Chris ^a   Lake, Roger ^a   Blanks, Dan ^a   Moise, Ted ^a   Kao, Yung Chung ^a   Frensley, William R ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER AIDED ANALYSIS; COMPUTER AIDED DESIGN; COMPUTER SIMULATION; COMPUTER SOFTWARE; CURRENT VOLTAGE CHARACTERISTICS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MODELS; THERMAL EFFECTS;

RESONANT TUNNELING DIODES (RTD); SOFTWARE PACKAGE NEMO; THERMIONIC EMISSION;

TUNNEL DIODES;

EID: 0030650826     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)