An analytical model for flat-band polysilicon quantization in MOS devices

IEEE Transactions on Electron Devices

Volumn 49, Issue 7, 2002, Pages 1314-1316

  Spinelli, Alessandro S ^a,b   Clerc, Raphael ^a,c   Ghibaudo, Gerard ^a  

^a IMEP LAHC   (France)

^b UNIVERSITY OF INSUBRIA   (Italy)

^c UNIVERSITY OF UDINE   (Italy)

Author keywords

Modeling; MOS devices; Polysilicon; Quantization

Indexed keywords

BAND STRUCTURE; CAPACITANCE MEASUREMENT; CHARGE CARRIERS; COMPUTER SIMULATION; GATES (TRANSISTOR); MOSFET DEVICES; QUANTUM ELECTRONICS; SEMICONDUCTOR DEVICE MODELS; THRESHOLD VOLTAGE;

CARRIER QUANTIZATION; CHARGE DISTRIBUTION; FLAT BANDS; QUANTUM MECHANICAL EFFECT; SCHRODINGER POISSON NUMERICAL SIMULATION; VOLTAGE SHIFT;

POLYSILICON;

EID: 0036638188     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.1013293     Document Type: Article

References (5)

1. A simple model for quantization effects in heavily-doped silicon MOSFET's at inversion conditions
2. Physical oxide thickness extraction and verification using quantum mechanical simulation
3. Carrier quantization at flat bands in MOS devices
4. Polysilicon quantization effects on the electrical properties of MOS transistors
5. 2 interface of a MOSFET