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Volumn 242, Issue 15, 2005, Pages 2985-2994

The characterization of InN growth under high-pressure CVD conditions

Author keywords

[No Author keywords available]

Indexed keywords


EID: 29244453662     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssb.200562246     Document Type: Conference Paper
Times cited : (27)

References (40)
  • 23
    • 29244459992 scopus 로고    scopus 로고
    • Indium-nitride growth by HPCVD: Real-time and ex-situ characterization
    • book chapter, edited by Z. C. Feng Imperial College Press (ICP)
    • N. Dietz, Indium-nitride growth by HPCVD: Real-time and ex-situ characterization, book chapter in: GaN-based Materials: Epitaxy and Characterization, edited by Z. C. Feng (Imperial College Press (ICP), 2005), pp. 1-31.
    • (2005) GaN-based Materials: Epitaxy and Characterization , pp. 1-31
    • Dietz, N.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.