Evolution of surface morphology and film stress during MOCVD growth of InN on sapphire substrates

Journal of Crystal Growth

Volumn 269, Issue 1, 2004, Pages 128-133

  Jain, Abhishek ^a   Raghavan, Srinivasan ^a   Redwing, Joan M ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

A1. Stresses; A3. Metalorganic chemical vapor deposition; B1. Indium nitride; B2. LT AlN; B2. Semiconducting III V materials

Indexed keywords

COALESCENCE; ELECTRIC REACTORS; FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NUCLEATION; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; STRESS ANALYSIS; SUBSTRATES; SURFACE PHENOMENA;

FILM ADHESION; FILM STRESS; INDIUM NITRIDE; LT-AIN;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 3342983215     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.05.042     Document Type: Conference Paper

References (16)

1. M. Adachi, Y. Murakami, A. Hashimoto, A. Yamamoto, Proceedings of the International Workshop on Nitride Semiconductors, Nagoya, IPAP Conference Series 1, 2000, pp. 339-342.
2. H. Lu, W.J. Schaff, L.F. Eastman, J. Wu, W. Walukiewicz, D.C. Look, R.J. Molnar, MRS Proceedings GaN and Related Alloys, Vol. 743, Fall 2002, L4.10.
3. Koukitu A., Seki H. Jpn. J. Appl. Phys. Part. 2(36):1977;L750.
4. Schmidtling T., Drago M., Pohl U.W., Richter W. J. Crystal Growth. 248:2003;523-527.
5. Higashiwaki M., Matsui T. J. Crystal Growth. 251:2003;494-498.
6. Raghavan S., Redwing J.M. J. Crystal Growth. 261:2004;294-300.
7. Hearne S., Chason E., Han J., Floro J.A., Figiel J., Hunter J., Amano H., Song I.S.T. Appl. Phys. Lett. 74(3):1999;356-358.
8. Stoney G.G. Proc. R. Soc. A82(553):1909;172-175.
9. A. Jain, J.M. Redwing, MRS Proceedings GaN and Related Alloys, Vol. 798, Fall 2003, Y12.8.
10. Davydov V.Yu., Klochikhin A.A., Seisyan R.P., Emtsev V.V., Ivanov S.V., Bechstedt F., Furthmuller J., Harima H., Mudryi A.V., Aderhold J., Semchinova O., Graul J. Phys. Stat. Sol. (B). 229:2002;1.
11. Bechstedt F., Furthmuller J. J. Crystal Growth. 246:2002;315-319.
12. Xu K., Yoshikawa A. Appl. Phys. Lett. 83(2):2003;251-253.
13. Yamaguchi S., Kariya M., Nitta S., Takeuchi T., Wetzel C., Amano H., Akasaki I. J. Appl. Phys. 85:1999;7682.
14. Nix W.D., Clemens B.M. J. Mater. Res. 14:1999;3467-3473.
15. Sheldon B.W., Lau K.H.A., Rajamani A. J. Appl. Phys. 90:2001;5097.
16. Finegan J.D., Hoffman R.W. J. Appl. Phys. 30:1959;587.