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Volumn 5023, Issue , 2003, Pages 68-71
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Band gap of hexagonal InN and InGaN alloys
a a a a a a b b c c d e f f g h h |
Author keywords
Absorption and reflection spectra; Electronic structure; III V semiconductors; Photoluminescence
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Indexed keywords
ELECTRONIC STRUCTURE;
ENERGY GAP;
MOLECULAR BEAM EPITAXY;
NANOSTRUCTURED MATERIALS;
PHOTOLUMINESCENCE;
FREE CARRIER CONCENTRATIONS;
SEMICONDUCTING INDIUM COMPOUNDS;
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EID: 0042878659
PISSN: 0277786X
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1117/12.511325 Document Type: Conference Paper |
Times cited : (11)
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References (11)
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