1/f noise in the tunneling current of thin gate oxides

Materials Research Society Symposium - Proceedings

Volumn 428, Issue , 1996, Pages 311-315

  Alers, G B ^a   Monroe, D ^a   Krisch, K S ^a   Weir, B E ^a   Chang, A M ^a  

^a NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; ELECTRON TUNNELING; GATES (TRANSISTOR); OXIDES; PROBES; SEMICONDUCTOR DEVICE MODELS; SPURIOUS SIGNAL NOISE;

THIN GATE OXIDES;

THIN FILM DEVICES;

EID: 0030420873     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-428-311     Document Type: Conference Paper

References (8)