Impact of the back-gate bias on the low-frequency noise of partially depleted silicon-on-insulator MOSFETs

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5470, Issue , 2004, Pages 208-214

  Lukyanchikova, N ^a   Garbar, N ^a   Smolanka, A ^a   Simoen, E ^b   Mercha, A ^b   Claeys, C ^b,c  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b IMEC   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

LINEAR KINK-EFFECTS (LKE); NOISE SPECTRA; NYQUIST FLUCTUATIONS; TUNNELING CURRENTS;

CAPACITANCE; CARRIER CONCENTRATION; COMMUNICATION CHANNELS (INFORMATION THEORY); ELECTRIC RESISTANCE; ELECTRON TUNNELING; GATES (TRANSISTOR); IONIZATION; MATHEMATICAL MODELS; SILICON ON INSULATOR TECHNOLOGY; SPURIOUS SIGNAL NOISE;

MOSFET DEVICES;

EID: 4344588174     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.546971     Document Type: Conference Paper

References (12)

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