On single-electron technology full adders

IEEE Transactions on Nanotechnology

Volumn 4, Issue 6, 2005, Pages 669-680

  Sulieman, Mawahib H ^a,b   Beiu, Valeriu ^{a,b,c,d,e,f,g}  

^a IEEE   (United Arab Emirates)

^b UNITED ARAB EMIRATES UNIVERSITY   (United Arab Emirates)

^c UNIVERSITY OF ULSTER   (United Kingdom)

^d INNS (International Neural Network Society)   (United Arab Emirates)

^e European Neural Network Society (ENNS)   (Austria)

^f ASSOCIATION FOR COMPUTING MACHINERY   (United States)

^g Marie Curie Fellowship Association (MCFA)   (United Arab Emirates)

Author keywords

Full adders (FAs); Sensitivity to variations; Single electron technology (SET); Threshold logic

Indexed keywords

FULL ADDERS (FA); SENSITIVITY TO VARIATIONS; SINGLE-ELECTRON TECHNOLOGY (SET);

ADDERS; OPTIMIZATION; STRUCTURAL DESIGN; THRESHOLD LOGIC;

NANOTECHNOLOGY;

EID: 28444475609     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2005.858609     Document Type: Article

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