Single-electron transistors operating at room temperature, fabricated utilizing nanocrystals created by focused-ion beam

Applied Physics Letters

Volumn 80, Issue 12, 2002, Pages 2168-2170

  Kim, T W ^a   Choo, D C ^a   Shim, J H ^a   Kang, S O ^a  

^a Kwangwoon University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COULOMB OSCILLATION; FOCUSED ION BEAM TECHNIQUE; GATE VOLTAGES; NANOPARTICLE FORMATION; POTENTIAL APPLICATIONS; ROOM TEMPERATURE; SINGLE ELECTRON; SOURCE VOLTAGE;

DRAIN CURRENT; ION BEAMS; TRANSIENTS;

SINGLE ELECTRON TRANSISTORS;

EID: 79955995398     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1458685     Document Type: Article

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