Long-term reliability prediction of 935 nm LEDs using failure laws and low acceleration factor ageing tests

Quality and Reliability Engineering International

Volumn 21, Issue 6, 2005, Pages 571-594

  Deshayes, Y ^a   Bechou, L ^a   Verdier, F ^a   Danto, Y ^a  

^a UNIVERSITÉ BORDEAUX 1   (France)

Author keywords

Acceleration factor; Ageing tests; Failure mechanisms; LED; Lifetime distribution; Reliability

Indexed keywords

ACCELERATION; AGING OF MATERIALS; DEGRADATION; EXTRAPOLATION; FAILURE ANALYSIS; GALLIUM COMPOUNDS; MATHEMATICAL MODELS; RELIABILITY; SAMPLING;

ACCELERATION FACTOR; AGEING TESTS; FAILURE MECHANISMS; LIFETIME DISTRIBUTION;

LIGHT EMITTING DIODES;

EID: 26644451393     PISSN: 07488017     EISSN: None     Source Type: Journal    
DOI: 10.1002/qre.670     Document Type: Article

References (57)

1. Fukuda M. Reliability and Degradation of Semiconductor Lasers and LEDs. Artech House: London, 1991.
2. Honeywell. Summary of SE450 GaAs:Si IRED chip long-term life study. Technical Datasheet, Honeywell, 1986; 368-376.
3. Matthews MR, MacDonald BM, Preston KR. Optical components - the new challenge in packaging. IEEE Transactions on Components, Hybrids, and Manufacturing Technology 1990; 13(4):798-806.
4. Wada O. Optoelectronic Integration: Physics, Technology and Application, Kluwer Academic: Boston, MA, 1994.
5. Sherry WM, Gaebe C, Miller TJ, Schweizer RC. High performance optoelectronic packaging for 2.5 and 10 Gb/s Laser modules. Proceedings of the 46th Electronic Components and Technology Conference, Orlando, FL, 1996; 620-627.
6. Sauvage D, Laffitte D, Perinet J, Bertier Ph, Goudard JL. Reliability of optoelectronic components for telecommunications. Microelectronics Reliability 2000; 40:1701-1708.
7. Ueda O. Reliability and Degradation of III-V Optical Devices. Artech House: London, 1996.
8. Fukuda M. Optical semiconductor device reliability. Microelectronics Reliability 2002; 42(4-5):679-683.
9. Sarkar G, Mridha S, Chong TT, Tuck WY, Kwan SC. Flip chip interconnect using anisotropic conductive adhesive. Journal of Materials Processing Technology 1999; 89-90(19):484-490.
10. Rodriguez MP, Shammas NYA. Finite element simulation of thermal fatigue in multilayer structures: Thermal and mechanical approach. Microelectronics Reliability 2001; 41(4):517-523.
11. Tan Q, Lee YC. Soldering technology for optoelectronic packaging. Proceedings of the 46th Electronic Components and Technology Conference, Orlando, FL, 1996; 26-36.
12. Itoh M, Sasaki J, Uda A, Yoneda I, Honmou H, Fukushima K. Use of AuSn solder bumps in three-dimensional passive aligned packaging of LD/PD arrays on Si optical benches. Proceedings of the 46th Electronic Components and Technology Conference, Orlando, FL, 1996; 1-7.
13. ASM International. ASM Engineered Materials Reference Book (2nd edn). ASM International, 1994.
14. Ueda O. Reliability issues in III-V compound semiconductor devices: Optical devices and GaAs-based HBTs. Microelectronics Reliability 1999; 39(12):1839-1855.
15. Generic Reliability Assurance Requirements for Optoelectronic Devices used in Telecommunications Equipments. Telcordia GR-XXX-CORE, 1998.
16. Goudard J-L, Berthier P, Boddaert X, Laffitte D, Périnet J. New qualification approach for optoelectronic components. Microelectronics Reliability 2002; 42(9):1307-1310.
17. Magistrali F, Sala D, Salmini G, Fantini F, Giansante M, Vanzi M. ESD induced degradation mechanisms of InGaAsP/InP lasers. ESREF, Bordeaux, 1991; 261-268.
18. Takeshita T, Sugo M, Nishiya T, Iga R, Fukuda M, Itaya Y. Degradation behavior in InGaAs/GaAs strained-quantum well lasers. Microelectronics Reliability 1998; 38(6-8):1211-1214.
19. Konishi S, Kitagawa G. Asymptotic theory for information criteria in model selection - functional approach. Journal of Statistical Planning and Inference 2003; 114(1-2):45-61.
20. Sheu JK. Electrical derivate characteristics of ion-implanted AlGaInP/GaInP multi-quantum well lasers. Solid State Electronics 1998; 42(10): 1867-1869.
21. Gottesman Y. Detection and localization of degradation damaged regions in 1.3 μm laser diodes on InP using lowcoherence reflectometry. Materials Science and Engineering B 2001; 84(3):236-240.
22. Deshayes Y, Bechou L, Mendizabal L, Danto Y. Early failure signatures of 1310 nm laser modules using electrical, optical and spectral measurements. Measurement 2003; 34(2): 157-178.
23. Rosencher E, Winter B. Optoelectronique. Thomson-CSF/Masson: Paris, 1998.
24. Hudait MK, Venkateswarlu P, Krupanidhi SB. Electrical transport characteristics of Au/n-GaAs Schottky diodes on n Ge at low temperature. Solid State Electronics 2001; 43:133-141.
25. Ramoo DM, Adams MJ. Carrier dependence of the spontaneous emission factor in DBR lasers. Optics Communications 2000; 180(4-6):345-348.
26. Salviati G, Zanotti-Fregonara C, Borgarino M, Lazzarini L, Cattani L, Cova P, Mazzer M. Study of degradation mechanisms in compound semiconductor based devices by SEM-cathodoluminescence. Microelectronics and Reliability 1998; 38(6-8): 1199-1210.
27. Pursiainen O, Linder N, Jaeger A, Oberschmid R, Streubel K. Identification of aging mechanisms in the optical and electrical characteristics of light-emitting diodes. Applied Physics Letters 2001; 279(18):2895-2897.
28. 1-xAs solar cells and LEDs. Solid State Electronics 1998; 42:567-571.
29. Casey HC, Muth J, Krishnankutty S, Zavada JM. Dominance of tunneling current and band filling in InGaN/AlGaN double heterostructure blue light emitting diodes. Applied Physics Letter 1996; 68:2867-2869.
30. Wright PD, Joyce WB, Craft DC. Electrical derivative characteristics of InGaAsP buried heterostructure laser. Journal of Applied Physics 1982; 53(3): 1364-1372.
31. Wood D. Optoelectronic Semiconductor Devices. Prentice-Hall: New York, 1994.
32. Wallon J et al. Spectral behaviour and ageing tests of InGaAs/AlGaAs and Al-free 980 nm pump laser diodes. ESREF, Bordeaux, France, 1995.
33. Serra L, Azzini GA, Montangero P. Blue shift and mirror degradations in InGaAs/GaAs strained quantum well lasers. ESREF, Glasgow, Scotland, 1994; 245-250.
34. Landesman JP. Micro-photoluminescence for the visualization of defects, stress and temperature profiles in high-power III-V's devices. Materials Science and Engineering B 2002; 91-92:555-611.
35. Dumas JM, Quilec M. Les matériaux pour l'optoélectronique. Journées électroniques, Club EEA, Montpellier, 1997; [oral presentation].
36. Dargys A, Kundrotas J. Handbook on Physical Properties of Ge, Si, GaAs and InP. Science and Encyclopedia Publishers: Vilnius, Russia, 1994.
37. Maissei LI, Gland R. Handbook of Thin Film Technology. McGraw-Hill: New York, 1983.
38. Sze SM, Physics of Semiconductor Devices. Wiley: New York, 1981.
39. Mendizabal L, Verneuil JL, Bechou L, Aupetit-Berthelemot C, Deshayes Y, Verdier F, Dumas JM, Danto Y, Laffitte D, Goudard JL, Hernandez Y. Impact of 1.55 μm laser diode degradation laws on fibre optic system performances using a system simulator. Microelectronics Reliability 2003; 43(9): 1743-1749.
40. Beister G, Maege J, Erbert G, Tränkle G. Non-radiative current in InGaAs/AlGaAs laser diodes as a measure of facet stability. Solid-State Electronics 1998; 42(11): 1939-1945.
41. 0.47As as a function of doping density. Phyisca B+C 1998; 134(163):399-402.
42. Mozume T, Georgiev N, Yoshida H. Dopant-induced interface disorder in InGaAs/AlAsSb heterostructures lattice matched to InP grown by molecular beam epitaxy. Journal of Crystal Growth 2001; 227-228:577-581.
43. Stadler A, Sulima T, Schulze J, Fink C, Kottantharayil A, Hansch W, Baumgärtner H, Eisele I, Lerch W. Dopant diffusion during rapid thermal oxidation. Solid-State Electronics 2000; 44(5):831-835.
44. Ihaddadene M, Koumetz S, Latry O, Ketata K, Ketata M, Dubois C. A model for diffusion of beryllium in InGaAs/InP heterostructures. Materials Science and Engineering B 2001; 80(1-3):73-76.
45. Gulluoglu AN, Tsai CT. Dislocation generation in GaAs crystals grown by the vertical gradient freeze method. Journal of Materials Processing Technology 2000; 102(1-3): 179-187.
46. Darek B, Lipinski T. Effect of structural defects on degradation of diffused GaAs LED's. Microelectronics and Reliability 1980; 20(3):384-385.
47. Mathieu H. Physique des Semiconducteurs et des Composants Électroniques. Masson: Paris, 1996.
48. Rakovics V, Püspöki S, Balázs J, Réti I, Frigeri C. Spectral characteristics of InGaAsP/InP infrared emitting diodes grown by LPE. Materials Science and Engineering B 2002; 91-92:491-494.
49. Malik RJ. III-V semiconductor materials and devices. Material Processing - Theory and Practice, vol. 7. F.F.Y. Wang: Amsterdam, 1989.
50. Ueda O. Degradation of III-V Optoelectronic devices. Journal of the Electrochemical Society 1988; 135(1): 11-22.
51. Fukuda M. Historical overview and future of optoelectronics reliability for optical fiber communication systems. Microelectronics Reliability 2000; 40:25-35.
52. 0.5P visible light-emitting diodes. Quality and Reliability Engineering International 2000; 16(1):45-49.
53. Van de Casteele J, Laffitte D, Gelly G, Starck C, Bettiati M. High reliability level demonstrated on 980 nm laser diode. Microelectronics Reliability 2003; 43(9-11):1751-1754.
54. Vollertsen PP. Thin dielectric reliability assessment for DRAM technology with deep trench storage node. Microelectronics Reliability 2003; 43(6):865-878.
55. Tomasi T, De Munari I, Lista V, Gherardi L, Righetti A, Villa M. Passive optical components: From degradation data to reliability assessment - preliminary results. Microelectronics Reliability 2002; 42(9-11):1333-1338.
56. Lista V, Garbossa P, Tomasi T, Borgarino M, Fantini F, Gherardi L, Righetti A, Villa M. Degradation based long-term reliability assessment for electronic components in submarine applications. Microelectronics Reliability 2002; 42(9-11): 1389-1392.
57. Delétage JY, Verdier FJ-M, Plano B, Deshayes Y, Bechou L, Danto Y. Reliability estimation of BGA and CSP assemblies using degradation law model and technological parameters deviations. Microelectronics Reliability 2003; 43(7):1137-1144.