Degradation behavior in InGaAs/GaAs strained-quantum well lasers

Microelectronics Reliability

Volumn 38, Issue 6-8, 1998, Pages 1211-1214

  Takeshita, Tatsuya ^a   Sugo, Mitsuru ^a   Nishiya, Teruhiko ^b   Iga, Ryuzou ^a   Fukuda, Mitsuo ^a   Itaya, Yoshio ^a  

^a NTT CORPORATION   (Japan)

^b NTT Access Network Service Systems Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; DEGRADATION; INDUCED CURRENTS; PHOTOCURRENTS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

STRAINED QUANTUM WELL LASERS;

QUANTUM WELL LASERS;

EID: 0032084001     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(98)00144-9     Document Type: Article

References (7)

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2. Laming, R. L., Farries, M. C., Morkel, P. R., Reekie L., and Pay ne, D. N. "Efficient pump wavelengths of erbium-doped fibre optical amplifier," Electron. Lett., vol. 25, pp. 12-14, 1989.
3. 3+-doped fiber amplifier pumped by 0.98 μm laser diodes," IEEE Photon. Technol. Lett., vol. 1, pp. 422-424, 1989.
4. Fukuda, M., Okayasu, M., Temmyo, J., and Nakano, J. "Degradation behavior of 0.98- μm strained quantum well InGaAs/AlGaAs lasers under high-power operation," IEEE J. Quantum. Electron., vol. 30, pp. 471-476, 1994.
5. Moser A., and Latta, E. E. "Arrhenius parameters for the rate process leading to catastrophic damage AlGaAs-GaAs laser facets," J. Appl. Phys., vol. 71, pp. 4848-4853, 1992.
6. Wallon J., and Devoid, P. "Spectral Behavior and Aging Tests of InGaAs/AlGaAs and Al-free 980nm Pump Laser Diodes," ESREF 95, Bordeaux, France, 1995, pp. 415-420.
7. Fukuda, M., Reliability and Degradation of Semiconductor Lasers and LEDs, Artech House (1991).