Electrical derivative characteristics of ion-implanted AlGaInP/GaInP multi-quantum well lasers

Solid-State Electronics

Volumn 42, Issue 10, 1998, Pages 1867-1869

  Sheu, Jinn Kong ^a   Su, Yan Kuin ^a   Chang, Shoou Jinn ^a   Chi, Gou Chung ^b   Lin, Kai Bin ^b   Liu, Chia Cheng ^c   Chiu, Chien Chia ^c  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^c INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; EQUIVALENT CIRCUITS; ION IMPLANTATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS;

CARRIER CONFINEMENT CHARACTERISTICS; ELECTRICAL DERIVATIVE CHARACTERISTICS;

QUANTUM WELL LASERS;

EID: 0032184367     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00148-8     Document Type: Article

References (8)

1. Dutta, N. K., Wilt, D. P. and Nelson, R. J., J. Lightwave Technol., 1984, 2, 201.
2. Eliseev, P. G., Krasilnkov, A. I., Manko, M. A. and Strakov, V. P., Physics of p-n Junction and Semiconductor Devices, ed. S. Y. Ryvkin and Y. V. Shmartsev. Plenum Press, New York, 1977, pp. 150-159.
3. Paoli, T. L. and Barnes, P. A., Appl. Phys. Lett., 1976, 28, 714.
4. Joyce, W. B. and Dixon, R. W., J. Appl. Phys., 1976, 47, 3510.
5. Barnes, P. A. and Paoli, T. L., IEEE J. Quantum Electron., 1976, 12, 633.
6. Anthony, P. J. and Schumaker, N. E., IEEE Electron. Dev. Lett., 1980, 1, 58.
7. Wright, P. D., Joyce, W. B. and Craft, D. C., J. Appl. Phys., 1982, 53, 1364.
8. Lin, J. F., Wu, M. C., Jou, M. J., Chang, C. M. and Lee, B. J., Electron Lett., 1994, 30, 494.