Dopant-induced interface disorder in InGaAs/AlAsSb heterostructures lattice matched to InP grown by molecular beam epitaxy

Journal of Crystal Growth

Volumn 227-228, Issue , 2001, Pages 577-581

  Mozume, T ^a   Georgiev, N ^a   Yoshida, H ^a  

^a WASEDA UNIVERSITY   (Japan)

Author keywords

A1. Diffusion; A1. Interfaces; A3. Molecular beam epitaxy; B1. Antimonides; B2. Semiconducting III V materials

Indexed keywords

COMPOSITION EFFECTS; HETEROJUNCTIONS; HIGH RESOLUTION ELECTRON MICROSCOPY; INTERDIFFUSION (SOLIDS); INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING ANTIMONY COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY (HRTEM);

SEMICONDUCTOR QUANTUM WELLS;

EID: 0035398835     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00775-8     Document Type: Conference Paper

References (8)