High reliability level demonstrated on 980nm laser diode

Microelectronics Reliability

Volumn 43, Issue 9-11, 2003, Pages 1751-1754

  Van de Casteele, J ^a   Laffitte, D ^a   Gelly, G ^a   Starck, C ^a   Bettiati, M ^a  

^a NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MATHEMATICAL MODELS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING;

RANDOM FAILURE;

SEMICONDUCTOR LASERS;

EID: 0041692472     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(03)00292-0     Document Type: Conference Paper

References (3)

1. Strite T, Mohrdiek S, Schmidt B. Power, reliability and stability improvements extend utility of 980-nm pump lasers. WDM solutions, October 2000
2. Yamamura S, Hanamaki Y, Kawasaki K, Shigihara K, Nagai Y, Nishinura T, Omura E. A very low failure rate of COD free high power 0.98μm laser diode with the window structure. OFC2000
3. Usami M, Edagawa N, Matsushima Y, Horie H, Fujimori T, Sakamoto I, Gotoh H. First undersea-qualified 980nm pump laser diode module evaluated with massive life test. OFC99