Dopant diffusion during rapid thermal oxidation

Solid-State Electronics

Volumn 44, Issue 5, 2000, Pages 831-835

  Stadler, A ^a   Sulima, T ^a   Schulze, J ^a   Fink, C ^a   Kottantharayil, A ^a   Hansch, W ^a   Baumgartner H ^a   Eisele, I ^a   Lerch, W ^b  

^a BUNDESWEHR UNIVERSITY MUNICH   (Germany)

^b STEAG AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION IN SOLIDS; MOLECULAR BEAM EPITAXY; MOS DEVICES; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; THERMOOXIDATION;

OXIDATION ENHANCED DIFFUSION (OED); RAPID THERMAL OXIDATION (RTO);

INTEGRATED CIRCUIT MANUFACTURE;

EID: 0033877815     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00287-7     Document Type: Article

References (6)

1. Lerch W et al. Wet rapid thermal oxidation of silicon with a pyrogenic system. Materials Science & Engineering B 1998.
2. 2/n-Si structures with the 40-75A thermally grown silicon oxide films under very strong fields. Applied Surface Science. 65/66:1993;835-839.
3. 2 films grown by rapid thermal oxidation. J. Vac. Sci. Technol. B. 15:(3):1997.
4. Hirose M et al. Current transport and reliability issues in ultrathin gate oxides.
5. Cao M., et al. Boron diffusion and penetration in ultrathin oxide with poly-Si gate. IEEE Electron Device Letters. 19:(8):1998.
6. 2 system. Elsevier: Materials Science Monographs. vol. 32, 1988. p. 184.