A model for diffusion of beryllium in InGaAs/InP heterostructures

Materials Science and Engineering: B

Volumn 80, Issue 1-3, 2001, Pages 73-76

  Ihaddadene, M ^a   Koumetz, S ^a   Latry, O ^a   Ketata, K ^a   Ketata, M ^a   Dubois, C ^b  

^a UNIVERSITÉ DE ROUEN   (France)

^b UNIVERSITÉ DE LYON   (France)

Author keywords

Beryllium; Diffusion; Gas source molecular beam epitaxy; InGaAs

Indexed keywords

BERYLLIUM; BOUNDARY CONDITIONS; COMPUTER SIMULATION; DIFFUSION IN SOLIDS; ELECTRIC FIELD EFFECTS; FERMI LEVEL; MOLECULAR BEAM EPITAXY; POINT DEFECTS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SUBSTITUTION REACTIONS;

GAS SOURCE MOLECULAR BEAM EPITAXY; SUBSTITUTIONAL INTERSTITIAL DIFFUSION MECHANISMS;

HETEROJUNCTIONS;

EID: 0035932207     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(00)00592-4     Document Type: Article

References (9)