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Quality and Reliability Engineering International
Volumn 16, Issue 1, 2000, Pages 45-49
Reliability of (AlxGa1-x)0.5In0.5P visible light-emitting diodes
Author keywords

[No Author keywords available]
Indexed keywords

ACTIVATION ENERGY; AGING OF MATERIALS; DEGRADATION; EXTRAPOLATION; HETEROJUNCTIONS; LIFE CYCLE; LIGHT EMITTING DIODES; SEMICONDUCTING ALUMINUM COMPOUNDS; SERVICE LIFE;
EID: 0342521594     PISSN: 07488017     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1099-1638(200001/02)16:1<45::AID-QRE302>3.0.CO;2-Q     Document Type: Article
Times cited : (22)
References (8)
  • 1
    • 0022130657 scopus 로고
    • Room temperature CW operation of AlGaInP double heterostructure visible lasers
    • Kobayashi K, Kawata S, Gomyo A, Hino I, Suzuki T. Room temperature CW operation of AlGaInP double heterostructure visible lasers. Electron. Lett. 1995; 21:931-932.
    • (1995) Electron. Lett. , vol.21 , pp. 931-932
    • Kobayashi, K.1    Kawata, S.2    Gomyo, A.3    Hino, I.4    Suzuki, T.5
  • 3
    • 0028420036 scopus 로고
    • AlGaInP/GaInP double-heterostructure orange light-emitting-diodes on GaAsP substrates prepared by metalorganic vapour-phase epitaxy
    • Lin JF, Wu MC, Jou MJ, Chang CM, Lee BJ. AlGaInP/GaInP double-heterostructure orange light-emitting-diodes on GaAsP substrates prepared by metalorganic vapour-phase epitaxy. J. Cryst. Growth 1994; 137:400-404.
    • (1994) J. Cryst. Growth , vol.137 , pp. 400-404
    • Lin, J.F.1    Wu, M.C.2    Jou, M.J.3    Chang, C.M.4    Lee, B.J.5
  • 4
    • 0010436436 scopus 로고
    • Twofold efficiency improvement in high performance AlGaInP light-emitting diodes in the 555-620 nm spectral region using a thick GaP window layer
    • Huang KH, Yu JG, Kuo CP, Fletcher RM, Osentowski TD, Stinson LJ, Craford MG. Twofold efficiency improvement in high performance AlGaInP light-emitting diodes in the 555-620 nm spectral region using a thick GaP window layer. Appl. Phys. Lett. 1992; 61:1045-1047.
    • (1992) Appl. Phys. Lett. , vol.61 , pp. 1045-1047
    • Huang, K.H.1    Yu, J.G.2    Kuo, C.P.3    Fletcher, R.M.4    Osentowski, T.D.5    Stinson, L.J.6    Craford, M.G.7
  • 6
    • 0020102048 scopus 로고
    • Performance and reliability of high radiance InGaAsP/InP DH LEDs operating in the 1.15-1.5 mm wavelength region
    • Wada O, Yamakoshi S, Hamaguchi H, Sanada T, Nishitani Y, Sakurai T. Performance and reliability of high radiance InGaAsP/InP DH LEDs operating in the 1.15-1.5 mm wavelength region. IEEE J. Quantum Electron. 1982; QE-18:368-373.
    • (1982) IEEE J. Quantum Electron. , vol.QE-18 , pp. 368-373
    • Wada, O.1    Yamakoshi, S.2    Hamaguchi, H.3    Sanada, T.4    Nishitani, Y.5    Sakurai, T.6
  • 7
    • 0027927325 scopus 로고
    • Accelerated ageing for AlGaInP visible laser diodes
    • Endo K, Kobayashi K, Fujii H, Ueno Y. Accelerated ageing for AlGaInP visible laser diodes. Appl. Phys. Lett. 1994; 64:146-148.
    • (1994) Appl. Phys. Lett. , vol.64 , pp. 146-148
    • Endo, K.1    Kobayashi, K.2    Fujii, H.3    Ueno, Y.4
  • 8
    • 0004414488 scopus 로고
    • Photoluminescence linewidths in metalorganic vapor phase epitaxially grown ordered and disordered InAlGaP alloys
    • Schneider RP, Jones ED, Lott JA, Bryan RP. Photoluminescence linewidths in metalorganic vapor phase epitaxially grown ordered and disordered InAlGaP alloys. J. Appl. Phys. 1992; 72:5397.
    • (1992) J. Appl. Phys. , vol.72 , pp. 5397
    • Schneider, R.P.1    Jones, E.D.2    Lott, J.A.3    Bryan, R.P.4

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.