Advances in resist materials for 193 nm lithography

Journal of Photopolymer Science and Technology

Volumn 12, Issue 3, 1999, Pages 423-432

  Bowden, Murrac J ^a,b   Gabor, Allen H ^a   Dimov, Ognian ^a   Medina, Arturo N ^a   Foster, Patrick ^a   Steinhäusler, Thomas ^a   Biafore, John J ^a   Spaziano, Gregory ^a   Slater, Sydney G ^a   Blakeney, Andrew J ^a   Neisser, Mark O ^a   Houlihan, Frank M ^a   Cirelli, Ray A ^a   Dabbagh, Gary ^a   Button, Richard S ^a   Rushkin, Ilya L ^a   Sweeney, James R ^a   Timko, Alien G ^a   Nalamasu, Om ^a   Reichmanis, Elsa ^a  

^a Arch Chemicals Incorporated   (United States)

^b LUCENT TECHNOLOGIES   (United States)

Author keywords

193 nm bilayer resists; 193 nm single layer resists

Indexed keywords

EID: 20244383335     PISSN: 09149244     EISSN: None     Source Type: Journal    
DOI: 10.2494/photopolymer.12.423     Document Type: Article

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