Interfacial structure and electrical properties of LaAlO3 gate dielectric films on Si by metalorganic chemical vapor deposition

Applied Physics A: Materials Science and Processing

Volumn 81, Issue 6, 2005, Pages 1181-1185

  Shao, Q Y ^a   Li, A D ^a   Cheng, J B ^a   Ling, H Q ^a   Wu, D ^a   Liu, Z G ^a   Ming, N B ^a   Wang, C ^b   Zhou, H W ^b   Nguyen, B Y ^c  

^a NANJING UNIVERSITY   (China)

^b MOTOROLA INC   (United States)

^c Advanced Products R and D Laboratory   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; COMPOSITION; DIELECTRIC FILMS; HIGH RESOLUTION ELECTRON MICROSCOPY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SECONDARY ION MASS SPECTROMETRY; SILICON; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

COMPOSITION DISTRIBUTION; GROWTH MECHANISMS; INTERFACIAL LAYERS; INTERFACIAL STRUCTURE;

LANTHANUM COMPOUNDS;

EID: 24144463922     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00339-004-3141-9     Document Type: Article

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